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Philips Semiconductors
TOPFET dual high side switch
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40?C ≤ T mb ≤ 150?C and typicals at T mb = 25?C. Refer to TRUTH TABLE .
Product specification
BUK218-50DY
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Undervoltage
V BG(UV)
? V BG(UV)
Low supply threshold voltage 1
Hysteresis
2
0.1
4.2
0.5
5.3
1
V
V
Overvoltage
V BG(OV)
? V BG(OV)
High supply threshold voltage 2
Hysteresis
35
0.4
40
1
45
2
V
V
I BG(OV)
Operating current per channel
V BG = 45 V
-
1
2
mA
OVERLOAD PROTECTION CHARACTERISTICS
Independent protection per channel. Refer to TRUTH TABLE .
5.5 V ≤ V BG ≤ 35 V, limits are at -40?C ≤ T mb ≤ 150?C and typicals at T mb = 25?C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Overload protection
V BL = V BG ; t p = 300 μ s
I L(lim)
Load current limiting
V BG ≥ 8 V
V BG = 5.5 V
18
15
30
27
42
42
A
A
Short circuit load protection
T mb ≤ 125?C prior to overload 3
P D(TO)
T DSC
Overload power threshold
Characteristic time
for latched protection 4
which determines trip time 5
100
-
150
200
200
500
W
μ s
Overtemperature protection
T j(TO)
? T j(TO)
Threshold junction temperature
Hysteresis 6
150
3
170
10
190
20
?C
?C
1 Undervoltage sensors causes each channel to switch off and reset.
2 Overvoltage sensors causes each output channel to switch off to protect its load.
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4 SC protection for P D > P D(TO) is latched. Normal operation may only be resumed after the input is toggled low then high again.
Normal operation is maintained as long as P D < P D(TO) and T j < T j(TO) .
5 Trip time t d sc varies with overload dissipation P D according to the exponential model formula t d sc ≈ T DSC / LN[ P D / P D(TO) ].
6 After cooling below the reset temperature the channel will resume normal operation.
May 2001
5
Rev 1.400
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